Lasing of Diode-Pumped c-Cut Tm, Ho:YAIO3
Identifieur interne : 001385 ( Main/Exploration ); précédent : 001384; suivant : 001386Lasing of Diode-Pumped c-Cut Tm, Ho:YAIO3
Auteurs : X. M. Duan [République populaire de Chine] ; B. Q. Yao [République populaire de Chine] ; L. L. Zheng [République populaire de Chine] ; C. T. Wu [République populaire de Chine] ; L. J. Li [République populaire de Chine] ; Y. J. Zhang [République populaire de Chine] ; Y. L. Ju [République populaire de Chine] ; Y. Z. Wang [République populaire de Chine]Source :
- Laser physics [ 1054-660X ] ; 2008.
Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
We report on a diode-pumped Tm, Ho: YAIO3 (c-cut) laser operating at 274 K. The maximum output power reaches 163 mW at an absorbed pump power of 2.3 W. A conversion efficiency from the absorbed pump power to laser output of 7. 1% is demonstrated in Tm, Ho:YAIO3, corresponding to a slope efficiency of 11.1 %. The output center wavelength of Tm, Ho:YAIO3 is 2102 nm with about a 2-nm FWHM. As far as we know, our work represents the first investigation of the laser performance of c-cut Tm, Ho:YAIO3 at 274 K.
Affiliations:
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Wu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology</s1><s2>Harbin 150001</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Harbin 150001</wicri:noRegion></affiliation></author><author><name sortKey="Li, L J" sort="Li, L J" uniqKey="Li L" first="L. J." last="Li">L. J. Li</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology</s1><s2>Harbin 150001</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Harbin 150001</wicri:noRegion></affiliation></author><author><name sortKey="Zhang, Y J" sort="Zhang, Y J" uniqKey="Zhang Y" first="Y. J." last="Zhang">Y. J. Zhang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology</s1><s2>Harbin 150001</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Harbin 150001</wicri:noRegion></affiliation></author><author><name sortKey="Ju, Y L" sort="Ju, Y L" uniqKey="Ju Y" first="Y. L." last="Ju">Y. L. Ju</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology</s1><s2>Harbin 150001</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Harbin 150001</wicri:noRegion></affiliation></author><author><name sortKey="Wang, Y Z" sort="Wang, Y Z" uniqKey="Wang Y" first="Y. Z." last="Wang">Y. Z. Wang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology</s1><s2>Harbin 150001</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Harbin 150001</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="wicri:source">INIST</idno><idno type="inist">08-0471466</idno><date when="2008">2008</date><idno type="stanalyst">PASCAL 08-0471466 INIST</idno><idno type="RBID">Pascal:08-0471466</idno><idno type="wicri:Area/Pascal/Corpus">000594</idno><idno type="wicri:Area/Pascal/Curation">000594</idno><idno type="wicri:Area/Pascal/Checkpoint">000614</idno><idno type="wicri:explorRef" wicri:stream="Pascal" wicri:step="Checkpoint">000614</idno><idno type="wicri:doubleKey">1054-660X:2008:Duan X:lasing:of:diode</idno><idno type="wicri:Area/Main/Merge">001425</idno><idno type="wicri:Area/Main/Curation">001385</idno><idno type="wicri:Area/Main/Exploration">001385</idno></publicationStmt><sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Lasing of Diode-Pumped c-Cut Tm, Ho:YAIO<sub>3</sub></title><author><name sortKey="Duan, X M" sort="Duan, X M" uniqKey="Duan X" first="X. M." last="Duan">X. M. Duan</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology</s1><s2>Harbin 150001</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Harbin 150001</wicri:noRegion></affiliation></author><author><name sortKey="Yao, B Q" sort="Yao, B Q" uniqKey="Yao B" first="B. Q." last="Yao">B. Q. Yao</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology</s1><s2>Harbin 150001</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Harbin 150001</wicri:noRegion></affiliation></author><author><name sortKey="Zheng, L L" sort="Zheng, L L" uniqKey="Zheng L" first="L. L." last="Zheng">L. L. Zheng</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology</s1><s2>Harbin 150001</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Harbin 150001</wicri:noRegion></affiliation></author><author><name sortKey="Wu, C T" sort="Wu, C T" uniqKey="Wu C" first="C. T." last="Wu">C. T. Wu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology</s1><s2>Harbin 150001</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Harbin 150001</wicri:noRegion></affiliation></author><author><name sortKey="Li, L J" sort="Li, L J" uniqKey="Li L" first="L. J." last="Li">L. J. Li</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology</s1><s2>Harbin 150001</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Harbin 150001</wicri:noRegion></affiliation></author><author><name sortKey="Zhang, Y J" sort="Zhang, Y J" uniqKey="Zhang Y" first="Y. J." last="Zhang">Y. J. Zhang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology</s1><s2>Harbin 150001</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Harbin 150001</wicri:noRegion></affiliation></author><author><name sortKey="Ju, Y L" sort="Ju, Y L" uniqKey="Ju Y" first="Y. L." last="Ju">Y. L. Ju</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology</s1><s2>Harbin 150001</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Harbin 150001</wicri:noRegion></affiliation></author><author><name sortKey="Wang, Y Z" sort="Wang, Y Z" uniqKey="Wang Y" first="Y. Z." last="Wang">Y. Z. Wang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology</s1><s2>Harbin 150001</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Harbin 150001</wicri:noRegion></affiliation></author></analytic><series><title level="j" type="main">Laser physics</title><title level="j" type="abbreviated">Laser phys.</title><idno type="ISSN">1054-660X</idno><imprint><date when="2008">2008</date></imprint></series></biblStruct></sourceDesc><seriesStmt><title level="j" type="main">Laser physics</title><title level="j" type="abbreviated">Laser phys.</title><idno type="ISSN">1054-660X</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Codoping</term><term>Diode pumping</term><term>Doped materials</term><term>Holmium additions</term><term>Output power</term><term>Solid state lasers</term><term>Ternary compounds</term><term>Thulium additions</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Pompage par diode</term><term>Laser solide</term><term>Puissance sortie</term><term>Matériau dopé</term><term>Codopage</term><term>Addition holmium</term><term>Addition thulium</term><term>Composé ternaire</term><term>Al O Y</term><term>4255R</term><term>YAlO3:Ho,Tm</term><term>4255X</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on a diode-pumped Tm, Ho: YAIO<sub>3</sub> (c-cut) laser operating at 274 K. The maximum output power reaches 163 mW at an absorbed pump power of 2.3 W. A conversion efficiency from the absorbed pump power to laser output of 7. 1% is demonstrated in Tm, Ho:YAIO<sub>3</sub>, corresponding to a slope efficiency of 11.1 %. The output center wavelength of Tm, Ho:YAIO<sub>3</sub> is 2102 nm with about a 2-nm FWHM. As far as we know, our work represents the first investigation of the laser performance of c-cut Tm, Ho:YAIO<sub>3</sub> at 274 K.</div></front></TEI><affiliations><list><country><li>République populaire de Chine</li></country></list><tree><country name="République populaire de Chine"><noRegion><name sortKey="Duan, X M" sort="Duan, X M" uniqKey="Duan X" first="X. M." last="Duan">X. M. Duan</name></noRegion><name sortKey="Ju, Y L" sort="Ju, Y L" uniqKey="Ju Y" first="Y. L." last="Ju">Y. L. Ju</name><name sortKey="Li, L J" sort="Li, L J" uniqKey="Li L" first="L. J." last="Li">L. J. Li</name><name sortKey="Wang, Y Z" sort="Wang, Y Z" uniqKey="Wang Y" first="Y. Z." last="Wang">Y. Z. Wang</name><name sortKey="Wu, C T" sort="Wu, C T" uniqKey="Wu C" first="C. T." last="Wu">C. T. Wu</name><name sortKey="Yao, B Q" sort="Yao, B Q" uniqKey="Yao B" first="B. Q." last="Yao">B. Q. Yao</name><name sortKey="Zhang, Y J" sort="Zhang, Y J" uniqKey="Zhang Y" first="Y. J." last="Zhang">Y. J. Zhang</name><name sortKey="Zheng, L L" sort="Zheng, L L" uniqKey="Zheng L" first="L. L." last="Zheng">L. L. Zheng</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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